Difference between PN junction diode and point contact diode
Category: Electronics Articles
9 Aug 17
| PN junction diode | Point contact diode |
|---|---|
| Its junction capacitance is low about 0.008 μF to 20 μF | The barrier layer capacitance at the point is very low about 0.1 pF to 1 pF. |
| Its operating frequency is low about 100 MHz. | Its operating frequency is very high about 10 GHz. |
| It has cut-in voltage 0.2 for Ge and 0.6 V for Si. | It has comparatively very low cut-in voltage. |
| It has high value of reverse breakdown voltage. | It has low value of reverse breakdown voltage. |
| It has low forward resistance. | It has very low forward resistance. |
| It can handle high current. | It can handle low currents. |
| It has higher voltage rating. | It has lower voltage rating. |
| It is suitable for low frequency applications. | It is suitable for high frequency applications. |
| It is used in rectifiers, clippers, clampers, voltage multipliers etc. | It is used to AM detector, video detector, microwave frequency mixer etc. |
