Specification of transistor

There are many specification of transistor,some of below:

1. Collector-base voltage (V^CB) is the maximum voltage that can be applied across the base and collector of a transistor.
2. Collector-emitter voltage (V^CEO) is the maximum that can be applied across the collector and emitter of a collector.
3. Collector saturation voltage is the collector-emitter voltage of a transistor that is fully conducting.
4. Maximum collector dissipation (P^C) is the maximum value of  power dissipated in collector of a transistor.
5. Collector current is the maximum value of collector current that a transistor can handle safely.
6. Collector cut-off current (I^CEO) is the reverse saturation current flowing between collector and emitter with base open.
7. Collector -to-base breakdown voltage is the maximum value of allowable reverse voltage that can be applied across the collector and base of a transistor with emitter open.
8. Transistor frequency at which the common emitter forward current gain is unity and denoted by  F_T. it’s significances is that the product of gain and bandwidth equal the transition frequency.
9. Emitter –to-base breakdown voltage is the maximum value of allowable voltage that can be applied across the emitter to base of transistor with collector open.
10. Forward current gain is the maximum value of forward current of a transistor in CE configuration.